high-electron-mobility

基本解释

Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。
In this thesis, a detailed discussion of plasma wave instability in the high-electron-mobility transistor (HEMT) driven by the terahertz radiation is presented.
本学位论文主要围绕高迁移率半导体在太赫兹辐射作用下，沟道内等离子体波振荡特性进行研究。
The subject of the invention is to raise the two-dimensional electron density and electron mobility of high electron mobility transistor of gallium nitride without generating short channelling effect.
其课题在于，针对氮化镓系的高电子迁移率晶体管，提高二维电子浓度和电子迁移率，并且不产生短沟道效应。