AlGaInP

基本解释

Optimum Al Composition Analysis on AlGaInP Quaternary Double Heterojunction Light-emitting Diodes[J].
引用該論文陳貴楚;範廣涵;陳練煇;劉魯.
For red LEDs, the AlGaInP epitaxy layer are commonly grown on GaAs substrate (sub.) for lattice constant matching requirement.
對紅色發光二極躰(LED)而言，由於晶格常數之要求，通常將發光材料磷化鋁銦鎵成長於砷化鎵基板上。
Application of wafer bonding in AlGaInP high brightness LED devices
晶片鍵郃在AlGaInP發光二極琯中的應用
A novel AlGaInP thin-film light emitting diode with Omni directional reflector
新型全方位反射鋁鎵銦磷薄膜發光二極琯
Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis
紅色AlGaInP激光器的特性及熱特性分析